Pt超晶格组装和对称性转化的原位液体TEM研究（英文）

具有精确控制结构的二维(2D)纳米晶超晶格在光子、等离子体和光电子应用中具有重要意义,并已被广泛研究,但在理解超晶格的形成机理和发展途径方面仍然存在挑战.本文采用液体池透射电镜技术原位观察了铂二维超晶格的形成和六配位到四配位的局部相转化过程.胶体纳米晶在溶液中流动时,通过纳米晶的收缩和重排或者纳米晶的附着形成长程有序的六配位超晶格.当纳米晶的形貌由截角八面体转变为立方体时,六配位超晶格重新排列为四配位立方超晶格.此外,我们的观察和定量分析结果表明,从六配位到四配位的相变主要是由垂直{100}面之间的强范德华相互作用引起的.实时追踪2D立方体超晶格的形成可以为超晶格组装和稳定机制提供独特的见解.     

Numerical simulation of particulate cake formation in cross-flow microfiltration: Effects of attractive forces

We present a two-dimensional simulation model to explore cake formation in cross-flow filtration. The model uses the lattice Boltzmann method (LBM) for fluid computation and the discrete element method (DEM) for particle computation; they were fully coupled with the smoothed profile method. We verified our model by simulating filtration under different transmembrane pressures. We then investigated the effects of attractive forces and particle concentration on the cake formation mechanism. Generally, as the attractive interaction and particle concentration increased, the particles formed a cake layer with a looser body and rough surface, due to the decrease in the mobility of the particles in contact with the cake surface. It is concluded that the effects of particle concentration are affected by the different conditions of attractive interactions between the particles.     

Influence of carbon nanotubes and dispersions of SiC on the physical and mechanical properties of pure copper and copper‐nickel alloy

This paper investigates the physical and mechanical properties of copper‐nickel alloy (at 50 wt.%–50 wt.%) and pure copper, mixed with various types of reinforcement materials such as carbon nanotubes (0.5 wt.%–2 wt.%) as nanoparticles, silicon carbide (1 wt.%–4 wt.%) as microparticles. The acquired composite specimens characteristics were estimated such as microstructure, density, electrical and thermal conductivity, hardness, and compression stress properties to determine the suitable reinforcement percentage that has the best physical and mechanical properties with different main matrix material whether copper‐nickel mechanical alloying or pure copper powder. The micron‐sized silicon carbide and nanosized carbon nanotubes were added to improve the mechanical and physical properties of the composite. The electrical and thermal conductivity of pure copper alloy enhanced compared with the copper‐nickel alloy matrix material. The hardness and compression yield stress of both pure copper and copper‐nickel composites have enhancement values and for copper‐nickel base composites hardness and compression yield stress have enhanced with the most positive enhancement values to examined an optimum percentage of reinforcing material.     

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

The growth of single‐crystal III‐nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi‐van der Waals epitaxial (QvdWE) growth of high‐quality AlN films on graphene/sapphire substrates is reported and their application in high‐performance DUV‐LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror‐smooth single‐crystal film in a very short time of ≈0.5 h (≈50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as‐fabricated DUV‐LED shows a low turn‐on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films.     

Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure

2D van der Waals (vdWs) heterostructures exhibit intriguing optoelectronic properties in photodetectors, solar cells, and light‐emitting diodes. In addition, these materials have the potential to be further extended to optical memories with promising broadband applications for image sensing, logic gates, and synaptic devices for neuromorphic computing. In particular, high programming voltage, high off‐power consumption, and circuital complexity in integration are primary concerns in the development of three‐terminal optical memory devices. This study describes a multilevel nonvolatile optical memory device with a two‐terminal floating‐gate field‐effect transistor with a MoS₂/hexagonal boron nitride/graphene heterostructure. The device exhibits an extremely low off‐current of ≈10^?14 A and high optical switching on/off current ratio of over ≈10⁶, allowing 18 distinct current levels corresponding to more than four‐bit information storage. Furthermore, it demonstrates an extended endurance of over ≈10⁴ program–erase cycles and a long retention time exceeding 3.6 × 10⁴ s with a low programming voltage of ?10 V. This device paves the way for miniaturization and high‐density integration of future optical memories with vdWs heterostructures.     

Dynamics of Antimonene–Graphene Van Der Waals Growth

Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low‐energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by a self‐limiting lateral growth with morphology sensitive to the deposition rate. Large 2D layers are observed at high deposition rates, whereas lower growth rates trigger an increased multilayer nucleation at the edges as they become aligned with the Z2 orientation leading to atoll‐like islands with thicker, well‐defined bands. This complexity of the vdW growth is elucidated based on the interplay between the growth rate, surface diffusion, and edges orientation. This understanding lays the groundwork for a better control of the growth of vdW heterostructures, which is critical to their large‐scale integration.     

Healing of Planar Defects in 2D Materials via Grain Boundary Sliding

Understanding the mechanisms and kinetics of defect annihilations, particularly at the atomic scale, is important for the preparation of high‐quality crystals for realizing the full potential of 2D transition metal dichalcogenides (TMDCs) in electronics and quantum photonics. Herein, by performing in situ annealing experiments in an atomic resolution scanning transmission electron microscope, it is found that stacking faults and rotational disorders in multilayered 2D crystals can be healed by grain boundary (GB) sliding, which works like a “wiper blade” to correct all metastable phases into thermodynamically stable phases along its trace. The driving force for GB sliding is the gain in interlayer binding energy as the more stable phase grows at the expanse of the metastable ones. Density functional theory calculations show that the correction of 2D stacking faults is triggered by the ejection of Mo atoms in mirror twin boundaries, followed by the collective migrations of 1D GB. The study highlights the role of the often‐neglected interlayer interactions for defect repair in 2D materials and shows that exploiting these interactions has significant potential for obtaining large‐scale defect‐free 2D films.     

High‐Performance Photoinduced Memory with Ultrafast Charge Transfer Based on MoS2/SWCNTs Network Van Der Waals Heterostructure

Photoinduced memory devices with fast program/erase operations are crucial for modern communication technology, especially for high‐throughput data storage and transfer. Although some photoinduced memories based on 2D materials have already demonstrated desirable performance, the program/erase speed is still limited to hundreds of micro‐seconds. A high‐speed photoinduced memory based on MoS₂/single‐walled carbon nanotubes (SWCNTs) network mixed‐dimensional van der Waals heterostructure is demonstrated here. An intrinsic ultrafast charge transfer occurs at the heterostructure interface between MoS₂ and SWCNTs (below 50 fs), therefore enabling a record program/erase speed of ≈32/0.4 ms, which is faster than that of the previous reports. Furthermore, benefiting from the unique device structure and material properties, while achieving high‐speed program/erase operation, the device can simultaneously obtain high program/erase ratio (≈10⁶), appropriate storage time (≈10³ s), record‐breaking detectivity (≈10¹⁶ Jones) and multibit storage capacity with a simple program/erase operation. It even has a potential application as a flexible optoelectronic device. Therefore, the designed concept here opens an avenue for high‐throughput fast data communications.     

Large‐Scale Growth and Field‐Effect Transistors Electrical Engineering of Atomic‐Layer SnS2

2D layers of metal dichalcogenides are of considerable interest for high‐performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS₂ nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large‐size and high‐quality SnS₂ atomic layers still remains a challenge. Herein, a salt‐assisted chemical vapor deposition method is provided to synthesize atomic‐layer SnS₂ with a large crystal size up to 410 µm and good uniformity. Particularly, the as‐fabricated SnS₂ nanosheet‐based field‐effect transistors (FETs) show high mobility (2.58 cm² V^?1 s^?1) and high on/off ratio (≈10⁸), which is superior to other reported SnS₂‐based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron–phonon scattering with the temperature. Moreover, SnS₂ can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS₂ endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.